17:54 uur 09-02-2017

Toshiba start bouw van Fab 6 en Memory R&D in Yokkaichi in Japan

YOKKAICHI, Japan–(BUSINESS WIRE)– Toshiba Corporation (TOKYO:6502) heeft vandaag bekendgemaakt dat het is begonnen met de bouw van een hypermoderne fabriek halfgeleiders, Fab 6, en een nieuw onderzoeks- en ontwikkelingscentrum het Memory R&D Center. Beide locaties staan op Toshiba’s complex in de Japanse stad Yokkaichi, in de prefectuur Mie.

Fab 6 is gewijd aan de productie van BiCS FLASH™, een vernieuwend type 3D-flashgeheugen van Toshiba. Net zoals bij Fab 5 is de bouw van de fabriek onderverdeeld in twee fases. Dit zorgt voor een optimaal investeringstempo ten opzichte van de markttrends. Toshiba bepaalt de juiste capaciteit en productiedoelstellingen door de markt nauwgezet te volgen.

 

Toshiba Starts Construction of Fab 6 and Memory R&D Center at Yokkaichi, Japan

YOKKAICHI, Japan–(BUSINESS WIRE)– Toshiba Corporation (TOKYO:6502) today announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company’s main memory production base.

This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20170208006381/en/

Artist's impression of Fab 6, Yokkaichi Operations (Graphic: Business Wire)Artist’s impression of Fab 6, Yokkaichi Operations (Graphic: Business Wire)

Fab 6 will be dedicated to production of BiCS FLASH™, Toshiba’s innovative 3D Flash memory 1. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.

Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH™ and new memories.

Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH™ production in line with market trends, and to retain leadership in innovation in the memory business.

* BiCS FLASH is a trademark of Toshiba Corporation
1 A structure that stacks Flash memory cells on a silicon substrate. It realizes significant density improvements over planar NAND Flash memory, where cells are formed on the substrate.

About Toshiba
Founded in Tokyo in 1875, Toshiba Corporation is a Fortune Global 500 company that contributes to a better world and better lives with innovative technologies in Energy, Infrastructure and Storage. Guided by the philosophy of “Committed to People, Committed to the Future,” Toshiba promotes operations through a global network of 551 consolidated companies employing 188,000 people, with annual sales surpassing 5.6 trillion yen (US$50 billion; March 31, 2016).
Find out more about Toshiba at www.toshiba.co.jp/index.htm

Contacts

Toshiba Corporation
Storage & Electronic Devices Solutions Company
Koichi Tanaka / Kota Yamaji, +81-3-3457-3576
Public Relations & Investor Relations Group
Business Planning Division
semicon-NR-mailbox@ml.toshiba. co.jp

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