15:57 uur 22-02-2017

Toshiba levert proefexemplaren van 64-laags 3D-flashgeheugen van 512 gigabit

TOKYO–(BUSINESS WIRE)– Toshiba Corporation (TOKYO:6502) onthult vandaag de nieuwste toevoeging aan zijn toonaangevende productlijn van driedimensionaal BiCS FLASH™-geheugen met gestapelde celstructuur: een uit 64 lagen bestaande chip van 512 gigabit met 3-bit-per-celtechnologie (triple-level cell, TLC). De nieuwe chip is toepasbaar in SSD’s voor zakelijk en particulier gebruik. Deze maand begint de levering van proefexemplaren. Massaproductie van de chip staat gepland in de tweede helft van dit kalenderjaar.

 

 

Toshiba Now Shipping Samples of 64-Layer, 512-gigabit 3D Flash Memory

TOKYO–(BUSINESS WIRE)– Toshiba Corporation (TOKYO:6502) has today unveiled the latest addition in its industry-leading line-up of BiCS FLASH™ three-dimensional flash memory with a stacked cell structure *1, a 64-layer device that achieves a 512-gigabit (64-gigabytes) capacity with 3-bit-per-cell (triple-level cell, TLC) technology. The new device will be used in applications that include enterprise and consumer SSD. Sample shipments of the chip started this month, and mass production is scheduled for the second half of this calendar year.

Toshiba continues to refine BiCS FLASH™, and the next milestone on its development roadmap is the industry’s largest capacity* 2, a 1-terabyte product with a 16-die stacked architecture in a single package. Plans call for the start of sample shipments in April 2017.

For the new 512-gigabit device, Toshiba deployed leading-edge 64-layer stacking process to realize a 65% larger capacity per unit chip size than the 48-layer 256-gigabit (32-gigabytes) device, and has increased memory capacity per silicon wafer, reducing the cost per bit.

Toshiba’s Memory business already mass produces 64-layer 256-gigabit (32-gigabytes) devices and will expand BiCS FLASH™ production. It will advance 3D technology to realize increased densities and finer processes in order to meet diversifying market needs.

*1: A structure stacking Flash memory cells vertically on a silicon substrate to realize significant density improvements over planar NAND Flash memory, where cells are formed on the silicon substrate.
*2: As of February 22, 2017. Toshiba survey.
* BiCS FLASH is a trademark of Toshiba Corporation.

About Toshiba
Founded in Tokyo in 1875, Toshiba Corporation is a Fortune Global 500 company that contributes to a better world and better lives with innovative technologies in Energy, Infrastructure and Storage. Guided by the philosophy of “Committed to People, Committed to the Future,” Toshiba promotes operations through a global network of 551 consolidated companies employing 188,000 people, with annual sales surpassing 5.6 trillion yen (US$50 billion; March 31, 2016).
Find out more about Toshiba at www.toshiba.co.jp/index.htm

Contacts

Toshiba Corporation
Storage & Electronic Devices Solutions Company
Koichi Tanaka / Kota Yamaji, +81-3-3457-3576
Public Relations & Investor Relations Group
Business Planning Division
semicon-NR-mailbox@ml.toshiba. co.jp
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